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  SODIMM Notebook Memory Geil 4GB CL17 DDR4 2400MHz

  1.399,00ден

  Технички спецификации DDR4 PC4-19200 2400MHz – Available CAS: 17-17-17 – Non-ECC, Un-buffered DIMM – Working Voltage 1.2V – DBT(Die-hard Burn-in Technology) Enhanced

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  SODIMM Notebook Memory Geil 8GB CL17 DDR4 2400MHz

  2.599,00ден

  Технички спецификации DDR4 PC4-19200 2400MHz – Available CAS: 17-17-17 – Non-ECC, Un-buffered DIMM – Working Voltage 1.2V – DBT(Die-hard Burn-in Technology) Enhanced

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  SODIMM Notebook Memory Geil 8GB DDR3 1600Mhz CL11

  2.449,00ден

  Технички спецификации DDR3 1600MHz CAS11 SO-DIMM – Available CAS: 11-11-11-28 – 204 pin, Non-ECC, Un-buffered DIMM – Working Voltage 1.5V – Retail Package : Recycled Paper Pulp – DBT(Die-hard Burn-in Technology) Enhanced

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  SODIMM Notebook Memory Kingston 16GB CL19 DDR4 2666MHz 1.2V

  4.650,00ден

  Технички спецификации KVR26S19D8/16 is a 2G x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM),2Rx8, non-ECC, memory module, based on sixteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: FEATURES: …

  SODIMM Notebook Memory Kingston 16GB CL19 DDR4 2666MHz 1.2VRead More

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  SODIMM Notebook Memory Kingston 4GB CL11 DDR3 1600 MHz SR

  1.699,00ден

  Технички спецификации 4GB 1600MHz DDR3 Non-ECC CL11 SODIMM Standard 512M X 64 Non-ECC 1600MHz 204-pin Unbuffered SODIMM (DDR3, 1.5V, CL11, FBGA, Gold)

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  SODIMM Notebook Memory Kingston 4GB CL11 DDR3 1600MHz Low Voltage

  1.999,00ден

  Технички спецификации SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power (1.35V) = 2.376 W* UL Rating 94 V – 0 JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = …

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  SODIMM Notebook Memory Kingston 4GB CL19 DDR4 2666MHz 1.2V KVR26S19S6/4

  1.499,00ден

  Технички спецификации KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: FEATURES …

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  SODIMM Notebook Memory Kingston 8GB CL19 DDR4 2666MHz 1.2V

  2.699,00ден

  Технички спецификации KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: …

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